| PART |
Description |
Maker |
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| LH28F400SUB-Z0 |
4M (512K 8, 256K 16) Flash Memory 4分（12k56K6）快闪记忆体
4M (512K × 8, 256K × 16) Flash Memory
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
|
| HY29LV400TT90I HY29LV400BT90I |
4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory 4兆位（为512k × 8/256K × 16）低压快闪记忆体
|
Hynix Semiconductor, Inc.
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| M29W400B-90ZA1TR M29W400B-90ZA6 STMICROELECTRONICS |
256K X 16 FLASH 3V PROM, 90 ns, PBGA48
256K X 16 FLASH 2.7V PROM, 150 ns, PDSO48
256K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 8 FLASH 2.7V PROM, 100 ns, PBGA48
256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
512K X 8 FLASH 2.7V PROM, 120 ns, PBGA48
512K X 8 FLASH 3V PROM, 100 ns, PBGA48
256K X 16 FLASH 2.7V PROM, 100 ns, PDSO48
512K X 8 FLASH 2.7V PROM, 150 ns, PBGA48
|
STMICROELECTRONICS
|
| LH28F400SU-NC LH28F400SUE-NC60 LH28F400SUE-NC80 LH |
4M (512K 8, 256K 16) Flash Memory
4M (512K bb 8/ 256K bb 16) Flash Memory
4M (512K 8, 256K 16) Flash Memory
|
SHARP
|
| LH28F400SU-LC |
4M (512K × 8, 256K × 16) Flash Memory
4M (512K 8, 256K 16) Flash Memory
|
Sharp Corporation
|
| LH28F400SUT-NC60 LH28F400SUT-NC80 LH28F400SUE-NC60 |
4M (512K 8 256K 16) Flash Memory
4M (512K 】 8, 256K 】 16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| F49L400BA-90T F49L400UA-70T F49L400UA-90T |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
|
Elite Semiconductor Memory Technology Inc.
|
| F49L400BA-90T F49L400BA-70T F49L400UA |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory
|
http://
Elite Semiconductor Memory Technology Inc.
|
